High performance blocking filters for the region 1µm to 20µmSeeley, J. S. and Smith, S. D. (1966) High performance blocking filters for the region 1µm to 20µm. Applied Optics, 5 (1). pp. 81-85. ISSN 0003-6935 Full text not archived in this repository. It is advisable to refer to the publisher's version if you intend to cite from this work. See Guidance on citing. To link to this item DOI: 10.1364/AO.5.000081 Abstract/SummaryA set of filters based on the sequence of semiconductor edges is described which offers continuity of short-wave infrared blocking. The rejection throughout the stop region is greater than 103 for each filter and the transmission better than 70% through one octave with a square cutoff. The cutoff points are located at intervals of about two-thirds of an octave. Filters at 2.6 ,µm, 5.5 µm, and 12 µm which use a low-passing multilayer in combination with a semiconductor absorption edge are described in detail. The design of multilayers for optimum performance is discussed by analogy with the synthesis of electric circuit filters.
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