Linearized bond graph of Hodgkin-Huxley memristor neuron model
Al-Mashhadani, I. and Hadjiloucas, S. Full text not archived in this repository. It is advisable to refer to the publisher's version if you intend to cite from this work. See Guidance on citing. Official URL: http://ieeexplore.ieee.org/document/7827953/ Abstract/SummaryA linearized Bond Graph procedure is used to model memristive behavior of the Hodgkin-Huxley neuron. In the proposed framework, the dissipation field splits into two parts, resistor dissipations and memristor dissipations. Linearization is then applied. The discussed nonlinear Bond graph methodology has applications to other RLCM element network analysis and neuromorphic chip design.
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