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Direct detection of chlorosilylene and time resolved study of some of its reactions in the gas-phase using a new photochemical precursor

Becerra, R., Boganov, S.E., Egorov, M.P., Krylova, I.V., Nefedov, O.M. and Walsh, R. (2005) Direct detection of chlorosilylene and time resolved study of some of its reactions in the gas-phase using a new photochemical precursor. Chemical Physics Letters, 413 (1-3). pp. 194-200. ISSN 0009-2614

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To link to this item DOI: 10.1016/j.cplett.2005.07.079

Abstract/Summary

Chlorosilylene, ClSiH, was prepared by 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene in the gas phase. ClSiH was monitored in real time at 457.9 nm using a CW argon ion laser. The kinetics of reactions of ClSiH with C2H4, CH2 = CHCMe3, C2H2, Me2O, SO2, HCl, MeSiH3, Me2SiH2, Me3SiH, MeGeH3, MeGeH3 and precursor have been studied at ambient temperatures for the first time. Addition reactions of ClSiH and reactions with lone pair donors are faster than insertion reactions. Surprisingly ClSiH inserts faster into Si-H than Ge-H bonds. ClSiH is intermediate in reactivity between SiH2 and SiCI2. Relative reactivities of CISiH and SiH2 vary considerably. (c) 2005 Elsevier B.V. All rights reserved.

Item Type:Article
Refereed:Yes
Divisions:Faculty of Life Sciences > School of Chemistry, Food and Pharmacy > Department of Chemistry
ID Code:11001
Uncontrolled Keywords:ABSOLUTE RATE CONSTANTS, SILYLENE ADDITION-REACTION, POTENTIAL-ENERGY, SURFACE, H INSERTION REACTION, TEMPERATURE-DEPENDENCE, SILANE, PROTOTYPE, TRICHLOROSILANE, GERMYLENE, KINETICS

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