Low-temperature partial dissociation of water on Cu(110)
Ammon , C., Bayer, A., Steinruck, H.P. and Held, G. (2003) Low-temperature partial dissociation of water on Cu(110). Chemical Physics Letters, 377 (1-2). pp. 163-169. ISSN 0009-2614
Full text not archived in this repository.
To link to this item DOI: 10.1016/S0009-2614(03)01127-8
The low-temperature reactivity of water (D2O) adsorbed on clean and oxygen pre-covered Cu(1 1 0) was studied using high resolution X-ray photoelectron spectroscopy (HRXPS) and low energy electron diffraction (LEED). On the clean surface partial dissociation to hydroxyl was observed already at 95 K. Upon annealing to 220 K hydrogen bonded water-hydroxyl chains are formed. Upon further annealing water desorbs leaving behind a layer of hydroxyl, most of which desorbs recombinatively eventually. With pre-adsorbed oxygen water reacts to hydroxyl lifting the added-row reconstruction even below 225 K. Upon annealing this adsorbate layer passes through essentially the same stages as without pre-adsorbed oxygen.