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Electron doping and phonon scattering in Ti1+xS2 thermoelectric compounds

Beaumale, M., Barbier, T., Breard, Y., Guelou, G., Powell, A. V., Vaqueiro, P. and Guilmeau, E. (2014) Electron doping and phonon scattering in Ti1+xS2 thermoelectric compounds. Acta Materialia, 78. pp. 86-92. ISSN 1359-6454

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To link to this item DOI: 10.1016/j.actamat.2014.06.032

Abstract/Summary

Bulk polycrystalline samples in the series Ti1+xS2 (x = 0 to 0.05) were prepared using high temperature synthesis from the elements and spark plasma sintering. X-ray structure analysis shows that the lattice constant c expands as titanium intercalates between TiS2 slabs. For x=0, a Seebeck coefficient close to -300 μV/K is observed for the first time in TiS2 compounds. The decrease in electrical resistivity and Seebeck coefficient that occurs upon Ti intercalation (Ti off stoichiometry) supports the view that charge carrier transfer to the Ti 3d band takes place and the carrier concentration increases. At the same time, the thermal conductivity is reduced by phonon scattering due to structural disorder induced by Ti intercalation. Optimum ZT values of 0.14 and 0.48 at 300K and 700K, respectively, are obtained for x=0.025.

Item Type:Article
Refereed:Yes
Divisions:Interdisciplinary centres and themes > Chemical Analysis Facility (CAF)
Faculty of Life Sciences > School of Chemistry, Food and Pharmacy > Department of Chemistry
Interdisciplinary centres and themes > Energy Research
ID Code:37394
Uncontrolled Keywords:energy; thermoelectric materials
Publisher:Elsevier

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