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X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface

Woodruff, D. P., Ledieu, J., Lovelock, K. R. J., Jones, R. G., Deyko, A., Wearing, L. H., McGrath, R., Chaudhuri, A., Li, H. I., Su, S. Y., Mayer, A., Stanisha, N. A. and Diehl, R. D. (2015) X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface. Physical Review B, 91 (11). 115418. ISSN 1098-0121

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To link to this item DOI: 10.1103/PhysRevB.91.115418

Abstract/Summary

Quantitative adsorption structure determinations on quasicrystals are scarce because most techniques for measuring surface structures are not well suited to the complex and infinite unit cells of quasicrystals. The normal incidence standing x-ray wave field technique presents a solution to these problems because it can be made inherently surface sensitive and does not involve extensive computational effort. We describe a method for applying this technique to adsorbates on quasicrystals, with specific application to a submonolayer of Si atoms on a decagonal Al-Co-Ni surface. We demonstrate the sensitivity of the technique to both adsorption site and geometry, leading to the conclusion that the Si atoms, which form six-atom pentagonal clusters, have an average height of 1.77 ± 0.05 Å above pentagonal hollow sites, with a significant height variation among the Si atoms in the cluster. In particular, the central Si atom sits more deeply than the five surrounding Si atoms, which are, on average, 2.7 Å away from the central Si atom. Although this study was performed on a decagonal quasicrystal that is periodic perpendicular to the surface, we describe how the technique can be applied to cases with no periodicity.

Item Type:Article
Refereed:Yes
Divisions:Faculty of Life Sciences > School of Chemistry, Food and Pharmacy > Department of Chemistry
ID Code:76263
Publisher:American Physical Society

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