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Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

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Luu, S. D. N. and Vaqueiro, P. ORCID: https://orcid.org/0000-0001-7545-6262 (2013) Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn). Semiconductor Science and Technology, 29 (6). 064002. ISSN 0268-1242

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To link to this item DOI: 10.1088/0268-1242/29/6/064002

Abstract/Summary

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Item Type:Article
Refereed:Yes
Divisions:Life Sciences > School of Chemistry, Food and Pharmacy > Department of Chemistry
ID Code:36420
Publisher:IOP
Publisher Statement:Authors who do not select the gold open access option can post the accepted version of their manuscript to an institutional or subject repository after a 12 month embargo (with reuse restrictions). The accepted version of a paper refers to an author's original version of an article after any changes made during peer review but before any editing, typesetting, etc by the publisher
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